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FGA60N60UFD 600V, 60A Field Stop IGBT
February 2009
FGA60N60UFD
600V, 60A Field Stop IGBT
Features
* High current capability * Low saturation voltage: VCE(sat) = 1.9V @ IC = 60A * High input impedance * Fast switching * RoHS compliant
tm
General Description
Using Novel Field Stop IGBT Technology, Fairchild's new series of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications where low conduc tion and switching losses are essential.
Applications
* Induction Heating, UPS, SMPS, PFC
C
G TO-3P E
GCE
Absolute Maximum Ratings
Symbol
VCES VGES IC ICM (1) PD TJ Tstg TL
Description
Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Collector Current Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds @ TC = 25oC @ TC = 100 C @ TC = 25 C @ TC = 25oC @ TC = 100 C
o o o
Ratings
600 20 120 60 180 298 119 -55 to +150 -55 to +150 300
Units
V V A A A W W
o o o
C C C
Notes: 1: Repetitive test , Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RJC(IGBT) RJC(Diode) RJA
Parameter
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Typ.
-
Max.
0.33 1.1 40
Units
o o
C/W C/W
oC/W
(c)2009 Fairchild Semiconductor Corporation
1
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FGA60N60UFD Rev. A
FGA60N60UFD 600V, 60A Field Stop IGBT
Package Marking and Ordering Information
Device Marking
FGA60N60UFD
Device
FGA60N60UFDTU
Package
TO-3PN
Packaging Type
Tube
Max Qty Qty per Tube
30ea
per Box
-
Electrical Characteristics of the IGBT
Symbol
Off Characteristics BVCES BVCES TJ ICES IGES
TC = 25C unless otherwise noted
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250A Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250A VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V
600 -
0.67 -
250 400
V V/oC A nA
On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 250A, VCE = VGE IC = 60A, VGE = 15V IC = 60A, VGE = 15V, TC = 125oC 4.0 5.0 1.9 2.1 6.5 2.4 V V V
Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz 2855 325 110 pF pF pF
Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate to Emitter Charge Gate to Collector Charge VCE = 400V, IC = 60A, VGE = 15V VCC = 400V, IC = 60A, RG = 5, VGE = 15V, Inductive Load, TC = 125oC VCC = 400V, IC = 60A, RG = 5, VGE = 15V, Inductive Load, TC = 25oC 23 58 130 40 1.81 0.81 2.62 22 61 141 63 1.92 1.23 3.15 188 21 97 80 ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ nC nC nC
FGA60N60UFD Rev. A
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FGA60N60UFD 600V, 60A Field Stop IGBT
Electrical Characteristics of the Diode
Symbol
VFM trr Qrr
TC = 25C unless otherwise noted
Parameter
Diode Forward Voltage IF = 30A
Test Conditions
TC = 25oC TC = 125oC TC = 25oC IES = 30A, dIES/dt = 200A/s TC = 125oC
o
Min.
-
Typ.
2.0 1.8 47 179 83 567
Max
2.6 -
Units
V
Diode Reverse Recovery Time
ns
Diode Reverse Recovery Charge
TC = 25oC TC = 125 C
nC
FGA60N60UFD Rev. A
3
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FGA60N60UFD 600V, 60A Field Stop IGBT
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
180 150
Collector Current, IC [A]
TC = 25 C 20V 12V 15V
o
Figure 2. Typical Output Characteristics
180 150
Collector Current, IC [A]
TC = 125 C 20V 12V 15V 10V
o
120 90 60 30 0 0
10V
120 90 60
VGE = 8V
VGE = 8V
30 0
2 4 6 Collector-Emitter Voltage, VCE [V]
8
0
2 4 6 Collector-Emitter Voltage, VCE [V]
8
Figure 3. Typical Saturation Voltage Characteristics
180 150
Collector Current, IC [A]
Common Emitter VGE = 15V TC = 25 C
Figure 4. Transfer Characteristics
180 150
Collector Current, IC [A]
Common Emitter VCE = 20V TC = 25 C TC = 125 C
o o
o
120 90 60 30 0 0
TC = 125 C
o
120 90 60 30 0
1 2 3 4 Collector-Emitter Voltage, VCE [V]
5
0
1 2 3 4 Gate-Emitter Voltage,VGE [V]
5
Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level
4.0
Collector-Emitter Voltage, VCE [V]
Common Emitter VGE = 15V
Figure 6. Saturation Voltage vs. VGE
20
Common Emitter
Collector-Emitter Voltage, VCE [V]
3.5 3.0
TC = -40 C
o
16
120A
12
2.5 2.0
60A
8
120A
1.5
IC = 30A
4
60A IC = 30A
1.0 25
50 75 100 125 o Collector-EmitterCase Temperature, TC [ C]
0
0
3
6 9 12 15 Gate-Emitter Voltage, VGE [V]
18
FGA60N60UFD Rev. A
4
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FGA60N60UFD 600V, 60A Field Stop IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20
Common Emitter
Figure 8. Saturation Voltage vs. VGE
20
Common Emitter TC = 125 C
o
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
TC = 25 C
o
16
16
12
12
8
60A 120A
8
120A
4
IC = 30A
4
60A IC = 30A
0
0
3
6 9 12 15 Gate-Emitter Voltage, VGE [V]
18
0 0 3 6 9 12 15 Gate-Emitter Voltage, VGE [V] 18
Figure 9. Capacitance Characteristics
6000
Common Emitter VGE = 0V, f = 1MHz TC = 25 C
o
Figure 10. Gate charge Characteristics
15
Common Emitter
o
Gate-Emitter Voltage, VGE [V]
TC = 25 C
Capacitance [pF]
Cies
12
300V VCC = 100V 200V
4000
9
Coes
6
2000
3
Cres
0 1 10 Collector-Emitter Voltage, VCE [V]
30
0 0 50 100 150 Gate Charge, Qg [nC] 200
Figure 11. SOA Characteristics
500 100
Collector Current, Ic [A]
10s
Figure 12. Turn off Switching SOA Characteristics
300
100
Collector Current, IC [A]
100s
10
1ms 10 ms
1
Single Nonrepetitive Pulse TC = 25oC Curves must be derated linearly with increase in temperature
DC
10
0.1
Safe Operating Area
0.01 1 10 100 Collector-Emitter Voltage, VCE [V] 1000
1 1
VGE = 15V, TC = 125 C
o
10
100
1000
Collector-Emitter Voltage, VCE [V]
FGA60N60UFD Rev. A
5
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FGA60N60UFD 600V, 60A Field Stop IGBT
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs. Gate Resistance
300
Figure 14. Turn-off Characteristics vs. Gate Resistance
6000
Common Emitter VCC = 400V, VGE = 15V IC = 60A TC = 25 C TC = 125 C td(off)
o o
Switching Time [ns]
100
tr
Switching Time [ns]
1000
td(on)
Common Emitter VCC = 400V, VGE = 15V IC = 60A TC = 25 C TC = 125 C
o o
100
tf
10 0 10 20 30 40 Gate Resistance, RG [] 50
10 0 10 20 30 40 50
Gate Resistance, RG []
Figure 15. Turn-on Characteristics vs Collector Current
500
Common Emitter VGE = 15V, RG = 5 TC = 25 C
o o
Figure 16. Turn-off Characteristics vs. Collector Current
1000
Common Emitter VGE = 15V, RG = 5 TC = 25 C
o
Switching Time [ns]
100
Switching Time [ns]
TC = 125 C
tr
TC = 125 C
o
td(off)
100
td(on)
tf
10 0 20 40 60 80 100 120
Collector Current, IC [A]
30 0 20 40 60 80 100 120
Collector Current, IC [A]
Figure 17. Switching Loss vs. Gate Resistance
20
Common Emitter VCC = 400V, VGE = 15V
Figure 18. Switching Loss vs. Collector Current
20 10
Common Emitter VGE = 15V, RG = 5 TC = 25 C
o
10
Switching Loss [mJ]
IC = 60A
o
Eon
TC = 125 C Eon
Switching Loss [mJ]
TC = 25 C
o
TC = 125 C
o
Eoff
1
1
Eoff
0.1 0 10 20 30 40 Gate Resistance, RG [] 50 0 20 40 60 80 100 120
Collector Current, IC [A]
FGA60N60UFD Rev. A
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FGA60N60UFD 600V, 60A Field Stop IGBT
Typical Performance Characteristics
Figure 19. Forward Characteristics
200
Figure 20. Reverse Current
500 100
Reverse Current , IR [A]
100
TC = 125 C
o
Forward Current, IF [A]
TJ = 125 C
o
TJ = 25 C
o
10
TC = 75 C
o
10
TJ = 75 C
o
1
TC = 25 C TC = 125 C
o
o
0.1
TC = 25 C
o
1 0 1 2 3 Forward Voltage, VF [V] 4
0.01 0 200 400 Reverse Voltage, VR [V] 600
Figure 21. Stored Charge
500 100
Reverse Current , IR [A]
Figure 22. Reverse Recovery Time
60
Reverse Recovery Time, trr [ns]
TC = 125 C
o
200A/s
10
TC = 75 C
o
50
1
di/dt = 100A/s
40
0.1
TC = 25 C
o
0.01 0 200 400 Reverse Voltage, VR [V] 600
30 5 20 40 60
Forward Current, IF [A]
Figure 23. Transient Thermal Impedance of IGBT
1
Thermal Response [Zthjc]
0.5
0.1
0.2 0.1 0.05 0.02 0.01 single pulse
PDM t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC
0.01
1E-3 1E-5
1E-4
1E-3
0.01
0.1
1
Rectangular Pulse Duration [sec]
FGA60N60UFD Rev. A
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FGA60N60UFD 600V, 60A Field Stop IGBT
Mechanical Dimensions
TO-3PN
FGA60N60UFD Rev. A
8
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Rev. I39
(c) 2009 Fairchild Semiconductor Corporation
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